Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dial raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOI

ABSTRACT

A method of forming matched PFET/NFET spacers with differential widths for SG and EG structures and a method of forming differential width nitride spacers for SG NFET and SG PFET structures and PFET/NFET EG structures and respective resulting devices are provided. Embodiments include providing PFET SG and EG structures and NFET SG and EG structures; forming a first nitride layer over the substrate; forming an oxide liner; forming a second nitride layer on sidewalls of the PFET and NFET EG structures; removing horizontal portions of the first nitride layer and the oxide liner over the PFET SG and EG structures; forming RSD structures on opposite sides of each of the PFET SG and EG structures; removing horizontal portions of the first nitride layer and the oxide liner over the NFET SG and EG structures; and forming RSD structures on opposite sides of each of the NFET SG and EG structures.

RELATED APPLICATION

This application is a divisional of U.S. patent application Ser. No.15/151,550, filed May 11, 2016, entitled “DIFFERENTIAL SG/EG SPACERINTEGRATION WITH EQUIVALENT NFET/PFET SPACER WIDTHS & DUAL RAISED SOURCEDRAIN EXPITAXIAL SILICON AND TRIPLE-NITRIDE SPACER INTEGRATION ENABLINGHIGH-VOLTAGE EG DEVICE ON FDSOI,” which is incorporated herein byreference in its entirety.

TECHNICAL FIELD

The present disclosure relates to p-type field effect transistor (PFET)and n-type field effect transistor (NFET) core device (SG) and I/Odevice (EG) spacer integration. The present disclosure is particularlyapplicable to fully depleted silicon-on-insulator (FDSOI) devices and/orany technology requiring raised source/drain (RSD) epitaxy.

BACKGROUND

EG devices require thicker spacers to pass standard reliabilityrequirements. Whereas thin spacers are desired on SG devices to maintainstandard performance criteria. Typical dual RSD integration relies onadditive NFET/PFET spacers to block unwanted epitaxial (epi) growth.However, the device with the thicker spacer often takes a performancehit. Specifically, a high RSD/gate capacitance degrades F_(max). Knownapproaches involve using multiple spacer materials to force RSD epifacet; sacrificing SG performance by using thicker spacers on alldevices; or adding two additional spacers, a masking layer, and episteps to support NFET and PFET EG devices. Another known approachinvolves forming a nitride/oxide spacer sandwich, which is difficult tocontrol due to the use of several oxide consuming steps, e.g., multipleepi pre-cleans.

A need therefore exists for methodology enabling balanced SG performanceand EG reliability with matched NFET/PFET spacer widths, methodologyenabling formation of SG NFET, SG PGET, and EG NFET and PFET deviceswith different spacer thicknesses on FDSOI, and the resulting devices.

SUMMARY

An aspect of the present disclosure is a process of forming matchedPFET/NFET spacers with differential widths for SG and EG gatestructures.

Another aspect of the present disclosure is a device including matchedPFET/NFET spacers with differential widths for the SG and EG gatestructures.

A further aspect of the present disclosure is a process of formingdifferential width nitride spacers for a NFET SG gate structure, a PFETSG structure, and PFET/NFET EG gate structures, respectively.

An additional aspect of the present disclosure is a FDSOI high-k metalgate (HKMG) device having respective nitride spacer widths for the NFETSG gate structure, PFET SG structure, and PFET/NFET EG gate structures.

Additional aspects and other features of the present disclosure will beset forth in the description which follows and in part will be apparentto those having ordinary skill in the art upon examination of thefollowing or may be learned from the practice of the present disclosure.The advantages of the present disclosure may be realized and obtained asparticularly pointed out in the appended claims.

According to the present disclosure, some technical effects may beachieved in part by a method including: providing PFET SG and EG gatestructures and NFET SG and EG gate structures on a substrate, the PFETand NFET structures laterally separated; forming a first conformalnitride layer over the substrate; forming an oxide liner over thesubstrate; forming a second conformal nitride layer on sidewalls of thePFET and NFET EG gate structures; removing horizontal portions of thefirst nitride layer and the oxide liner over the PFET SG and EG gatestructures and substrate; forming RSD structures on opposite sides ofeach of the PFET SG and EG gate structures; removing horizontal portionsof the first nitride layer and the oxide liner over the NFET SG and EGgate structures and substrate; and forming RSD structures on oppositesides of each of the NFET SG and EG gate structures.

Aspects of the present disclosure include forming the second conformalnitride layer on the sidewalls of the PFET and NFET EG gate structuresby: forming the second conformal nitride layer over the substrate;planarizing the second conformal nitride layer down to the oxide liner;forming a photoresist layer over the PFET and NFET EG gate structures;removing the second conformal nitride layer from the PFET and NFET SGgate structures, and removing the photoresist layer. Other aspectsinclude removing the horizontal portions of the first nitride layer andthe oxide liner over the PFET SG and EG gate structures and substrateby: forming a hardmask layer over the substrate; forming a photoresistlayer over the NFET SG and EG gate structures; removing the hardmasklayer over the PFET SG and EG gate structures; etching the firstconformal nitride layer and the oxide liner down to the substrate; andremoving the photoresist layer. Further aspects include the etchingforming an L-shaped first conformal nitride layer spacer on oppositesides of each of the PFET SG and EG gate structures and an L-shapedoxide liner spacer on opposite sides of the PFET EG gate structure.Additional aspects include removing the horizontal portions of the firstnitride layer and the oxide liner over the NFET SG and EG gatestructures and substrate by: forming a hardmask layer over thesubstrate; forming a photoresist layer over the PFET SG and EG gatestructures; removing the hardmask layer over the NFET SG and EG gatestructures; etching the first conformal nitride layer and the oxideliner down to the substrate; removing the photoresist layer; andremoving the hardmask layer over the PFET SG and EG gate structures.Another aspect includes the etching forming an L-shaped first conformalnitride layer spacer on opposite sides of each of the NFET SG and EGgate structures and an L-shaped oxide liner spacer on opposite sides ofthe NFET EG gate structure. Other aspects include the RSD structuresbeing formed on the opposite sides of each of the PFET and NFET SG gatestructures are faceted.

Another aspect of the present disclosure is a device including: PFET SGand EG gate structures and NFET SG and EG gate structures formed on asubstrate, the PFET and NFET structures laterally separated; a pair ofL-shaped nitride spacers formed on the substrate and adjacent tosidewalls of each of the PFET and NFET SG and EG gate structures; anL-shaped oxide spacer formed on and adjacent to each L-shaped nitridespacer of the PFET and NFET EG gate structures; a nitride spacer formedon and adjacent to each L-shaped oxide spacer; faceted RSD structuresformed on opposite sides of each of the PFET and NFET SG gatestructures; and RSD structures formed on opposite sides of each of thePFET and NFET EG gate structures. Aspects of the device include eachL-shaped nitride spacer and each nitride spacer being formed of siliconoxycarbonitride (SiOCN), high-temperature iRad™ nitride, or siliconborocarbonitride (SiBCN)

A further aspect of the present disclosure is a method including:providing NFET SG and EG gate structures and PFET SG and EG gatestructures on a FDSOI substrate, the SG and EG structures laterallyseparated and each including a gate and a gate cap layer; forming aconformal first nitride layer over the NFET and PFET SG and EG gatestructures and the substrate; forming an oxide liner over the NFET andPFET SG and EG gate structures and substrate; forming a second conformalnitride layer over the NFET and PFET SG and EG structures and substrate;removing horizontal portions of the second nitride layer; masking theNFET and PFET EG gate structures; removing vertical portions of thesecond nitride layer adjacent to the NFET and PFET SG structures andexposed oxide liner; masking NFET or PFET EG and SG gate structures;removing horizontal portions of the first nitride layer; forming RSDstructures on the substrate adjacent to the PFET or NFET, respectively,SG and EG structures; forming a third nitride layer over the entiresubstrate; masking PFET or NFET, respectively, SG and EG gatestructures; removing horizontal portions of the third nitride layer;forming RSD structures on opposite sides of the PFET or NFET,respectively, SG and EG gate structures; and removing the first, second,and third nitride layers and the gate cap layer or the first, second,and third nitride layers, the gate cap layer, and the oxide liner downto an upper surface of the gate.

Aspects of the present disclosure include masking the NFET and PFET SGstructures after forming the oxide liner; removing the oxide liner fromthe NFET and PFET EG gate structures; and removing the masking. Otheraspects include removing the horizontal portions of the second nitridelayer by: etching the second nitride layer down to the oxide liner.Further aspects include removing the masking of the NFET and PFET EGgate structures prior to masking the NFET and PFET SG and EG gatestructures. Additional aspects include removing the masking of the NFETand PFET SG and EG gate structures prior to forming the RSD structuresadjacent to the PFET or NFET SG and EG structures. Another aspectincludes removing the masking of the PFET or NFET SG and EG gatestructures prior to the removing of the first, second, and third nitridelayers and the gate cap layer or the first, second, and third nitridelayers, the gate cap layer, and the oxide liner down to an upper surfaceof the gate. Other aspects include removing the third nitride layer fromover the RSD structures on the opposite sides of the NFET or PFET EG andSG gate structures; and performing spacer nitride deposition, etch, andsilicidation subsequent to the removing of the first, second, and thirdnitride layers and the gate cap layer or the first, second, and thirdnitride layers, the gate cap layer, and the oxide liner down to an uppersurface of the gate.

Another aspect of the present disclosure is a device including: a FDSOIsubstrate; PFET SG and EG gate structures and NFET SG and EG gatestructures formed on the FDSOI substrate, the SG and EG structureslaterally separated; a dual nitride layer spacer formed on each sidewallof the NFET and PFET SG gate structures; a triple nitride layer spacerformed on each sidewall of the NFET and PFET EG gate structures; and RSDstructures formed on opposite sides of the NFET and PFET SG and EG gatestructures. Aspects of the device include the dual nitride layer spacerbeing thinner than the triple nitride layer spacer. Other aspectsinclude the PFET SG gate structure being formed over a layer of silicongermanium (SiGe) and the PFET EG and NFET SG and EG structures beingformed over a layer of silicon. Further aspects include a layer of oxidebeing formed between a first and a second layer of nitride of the NFETand PFET EG structures.

Additional aspects and technical effects of the present disclosure willbecome readily apparent to those skilled in the art from the followingdetailed description wherein embodiments of the present disclosure aredescribed simply by way of illustration of the best mode contemplated tocarry out the present disclosure. As will be realized, the presentdisclosure is capable of other and different embodiments, and itsseveral details are capable of modifications in various obviousrespects, all without departing from the present disclosure.Accordingly, the drawings and description are to be regarded asillustrative in nature, and not as restrictive.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure is illustrated by way of example, and not by wayof limitation, in the figures of the accompanying drawing and in whichlike reference numerals refer to similar elements and in which:

FIGS. 1 through 8 schematically illustrate a process flow for formingmatched PFET/NFET spacers with differential widths for the SG and EGgate structures, in accordance with an exemplary embodiment;

FIGS. 9 through 21 schematically illustrate a process flow for forming aFDSOI HKMG device having different nitride spacer widths for the NFET SGgate structure, PFET SG structure, and PFET/NFET EG gate structures, inaccordance with an exemplary embodiment; and

FIGS. 22 through 31 schematically illustrate another process flow forforming a FDSOI HKMG device having different nitride and/ornitride/oxide spacer widths for the NFET SG gate structure, PFET SGstructure, and PFET/NFET EG gate structures, in accordance with anexemplary embodiment.

DETAILED DESCRIPTION

In the following description, for the purposes of explanation, numerousspecific details are set forth in order to provide a thoroughunderstanding of exemplary embodiments. It should be apparent, however,that exemplary embodiments may be practiced without these specificdetails or with an equivalent arrangement. In other instances,well-known structures and devices are shown in block diagram form inorder to avoid unnecessarily obscuring exemplary embodiments. Inaddition, unless otherwise indicated, all numbers expressing quantities,ratios, and numerical properties of ingredients, reaction conditions,and so forth used in the specification and claims are to be understoodas being modified in all instances by the term “about.”

The present disclosure addresses and solves the current problems ofunbalanced PFET and NFET SG and EG gate structures in terms ofperformance and reliability and spacer breakdown from high drainvoltages attendant upon integrated RSD formation. The present disclosurealso addresses and solves the current problem of a difficultycontrolling nitride/oxide spacer formation attendant upon FDSOI HKMGformation.

Methodology in accordance with embodiments of the present disclosureincludes providing PFET SG and EG gate structures and NFET SG and EGgate structures on a substrate, the PFET and NFET structures laterallyseparated. A first conformal nitride layer and an oxide liner are formedover the substrate and a second conformal nitride layer is formed onsidewalls of the PFET and NFET EG gate structures. Horizontal portionsof the first nitride layer and the oxide liner are removed from over thePFET SG and EG gate structures and substrate and RSD structures areformed on opposite sides of each of the PFET SG and EG gate structures.Horizontal portions of the first nitride layer and the oxide liner areremoved from over the NFET SG and EG gate structures and substrate andRSD structures are formed on opposite sides of each of the NFET SG andEG gate structures.

Still other aspects, features, and technical effects will be readilyapparent to those skilled in this art from the following detaileddescription, wherein preferred embodiments are shown and described,simply by way of illustration of the best mode contemplated. Thedisclosure is capable of other and different embodiments, and itsseveral details are capable of modifications in various obviousrespects. Accordingly, the drawings and description are to be regardedas illustrative in nature, and not as restrictive.

FIGS. 1 through 8 (cross-sectional views) schematically illustrate aprocess flow for forming matched PFET/NFET spacers with differentialwidths for the SG and EG gate structures, in accordance with anexemplary embodiment. Adverting to FIG. 1, a PFET SG gate structure 101,a PFET EG gate structure 103, a NFET SG gate structure 105, and a NFETEG gate structure 107 are formed on a substrate 109. Each gate structureincludes a nitride gate cap 110. A nitride layer 111 is conformallyformed over the substrate 109. The nitride layer 111 may be formed, forexample, of low-K SiOCN, high temperature (630° C.) iRad™ nitride, orlow-K SiBCN to a thickness of 4 nm to 8 nm. The nitride layer 111 needsto be thick enough to prevent epitaxial silicon growth in the RSDregions, but thin enough to optimize overlap of the source/drainregions. An oxide liner 113, e.g., formed of undoped oxide (UDOX), iRad™oxide, or ozone tetraethyl orthosilicate (TEOS), is also formed over thesubstrate 109. The oxide liner 113 may be formed, for example, to athickness of 3 nm to 6 nm. The oxide liner 113 needs to be able towithstand both the subsequently formed nitride layer removal andsacrificial hard mask etch.

Next, a nitride layer 115 is conformally formed over the substrate 109.The nitride layer 115 is formed of the same material as the nitridelayer 111 and may be formed, e.g., to a thickness of 3 nm to 15 nmdepending on the technology (i.e., poly pitch or fin pitch), reliabilityconstraints, and operating drain voltage. The nitride layer 115 must beselective to the sacrificial hardmask that follows in the process. Thenitride layer 115 is then etched, e.g., by reactive ion etching (RIE)using tetrafluoromethane (CF₄), down to the oxide liner 113 formingouter spacers. A photoresist layer 117 is then formed over the PFET andNFET EG gate structures 103 and 107, respectively, and the nitride layer115 is removed from the PFET and NFET SG gate structures 101 and 105,respectively, by an etchant that is isotropic and selective to the oxideliner 113, as depicted in FIG. 2. The photoresist layer 117 is thenremoved.

Adverting to FIG. 3, a sacrificial hardmask 301 is formed over thesubstrate 109. The hardmask is formed of a material that is selective tothe nitride layer 115, e.g., 450° C.-500° C. iRad™ nitride orplasma-enhanced chemical vapor deposition (PECVD) nitride. A photoresistlayer 303 is then formed over the NFET SG and EG gate structures 105 and107, respectively. The hardmask 301 over the PFET SG and EG gatestructures 101 and 103, respectively, is then removed, e.g., using hotphosphoric acid. The hardmask 301 may also be removed, for example, byRIE using fluoromethane/oxide (CH₃F/O₂), to isotopically etch thehardmask 301 and to stop on the oxide liner 113.

Next, the oxide liner 113 and the nitride layer 111 are anisotropicallyetched down to the substrate 109 and gate caps 110, e.g., by RIE usingCF₄, forming nitride L-shaped spacers 111′ and oxide L-shaped spacers113′ on opposite sides of the PFET EG gate structure 103, as depicted inFIG. 4. After the final PFET spacer etch, the photoresist layer 303 isremoved. The oxide liner 113 may also be removed by a hydrofluoric (HF)pre-clean, leaving the nitride L-shaped spacers 111′ on the PFET SG gatestructure 101. Thereafter, the RSD structures 401 are formed byepitaxial growth while the complimentary devices are protected by thesacrificial hard mask 301. The specific length of the horizontal surfaceof the L-shaped spacers 111′ and 113′, e.g., 2 nm to 6 nm, will dependon a combination of factors such as the epitaxial precursor gas,hydrochloric acid (HCL) flow, spacer material, and spacer shape.Optionally, after the RSD structures 401 are grown, a thin oxide liner(not shown for illustrative convenience) may be formed, e.g., by plasmaoxidation or by a deposited oxide, to protect the RSD structures 401during further processing steps. If the thin oxide liner is deposited,it should be as thin as possible, e.g., 2 nm to 3 nm, to prevent thefinal L-shaped spacer of the NFET SG gate structure 105 from becomingtoo wide.

Adverting to FIG. 5, the hardmask layer 301 is isotropically removedfrom over the NFET SG and EG gate structures, 105 and 107, respectively.Next, similar to the steps of FIG. 3, a new hard mask layer 601 isformed over the substrate 109, as depicted in FIG. 6. Alternatively, thehardmask layer 301 may be left over the NFET SG and EG gate structures105 and 107, respectively, before depositing the hardmask layer 601. Aphotoresist layer 603 is then formed over the PFET SG and EG gatestructures 101 and 103, respectively, and the hardmask layer 601 (andhardmask layer 301, if still present) over the NFET SG and EG gatestructures 105 and 107, respectively, is isotropically removed, e.g.,using hot phosphoric acid, as depicted in FIG. 7. Similar to thehardmask layer 301, the hardmask layer 601 may also be removed, forexample, by RIE using CH₃F/O₂.

The oxide liner 113 and the nitride layer 111 are then anisotropicallyetched down to the substrate 109 and gate caps 110, e.g., by RIE usingCF₄, forming nitride L-shaped spacers 111′ and oxide L-shaped spacers113′ on opposite sides of the NFET SG and EG gate structures 105 and107, respectively. After the final NFET spacer etch, the photoresistlayer 603 is removed. Again, the oxide liner 113 may also be removed bya HF pre-clean forming the nitride L-shaped spacers 111′ on the NFET SGgate structure 105. Next, the RSD structures 701 are formed by epitaxialgrowth while the complimentary devices are protected by the sacrificialhard mask 601. Optionally, after the RSD structures 701 are grown, athin oxide liner (not shown for illustrative convenience) may again beformed, e.g., by plasma oxidation or by a deposited oxide, to protectthe RSD structures 701 during the subsequent removal of the hardmasklayer 601. The hardmask layer 601 over the PFET SG and EG gatestructures 101 and 103, respectively, is then isotropically removed,e.g., using hot phosphoric acid or RIE using CH₃F/O₂, as depicted inFIG. 8. Consequently, the nitride spacers 111′ and 115 have matchedwidths for the PFET and NFET SG and EG gate structures. Also, SGperformance is balanced with EG reliability requirements.

FIGS. 9 through 21 (cross-sectional views) schematically illustrate aprocess flow for forming a FDSOI HKMG device having different nitridespacer widths for the NFET SG gate structure, PFET SG structure, andPFET/NFET EG gate structures, in accordance with an exemplaryembodiment. Adverting to FIG. 9, NFET SG and EG gate structures 901 and903, respectively, and PFET SG and EG structures 905 and 907,respectively, are formed over a FDSOI substrate (not shown forillustrative convenience). Each gate structure includes a high-K metalgate 909, a silicon layer 911, and a nitride gate cap 912, and the NFETand PFET EG structures 903 and 907, respectively, also include a thickgate oxide layer 913 compared to the nonvisible gate oxide on the SGside. A buried oxide (BOX) layer 915 and a silicon channel layer 917 ora SiGe channel layer 919 are formed over the FDSOI substrate and betweenthe BOX layer shallow trench isolation (STI) regions 921 are formed. Anitride layer 923 is then conformally formed over the substrate. Thenitride layer 923 may be formed, e.g., to a thickness of 56 angstrom (Å)to 64 Å by molecular layer deposition (MLD). Thereafter, an oxide liner925 is conformally formed, for example, to a thickness of 20 Å to 40 Å,over the nitride layer 923.

Adverting to FIG. 10, a photoresist layer 1001 is formed over the NFETand PFET SG structures 901 and 905, respectively, and the oxide liner925 is removed from the NFET and PFET EG structures 903 and 907,respectively, and the substrate. The oxide liner 925 may be removed, forexample, by a WING™ or SiCoNi™ process. Thereafter, the photoresistlayer 1001 is removed. A nitride layer 1101 is then conformally formedover the substrate by MLD to a thickness of 60 Å to 80 Å, as depicted inFIG. 11 Next, horizontal portions of the nitride layer 1101 are removed,for example, by performing a spacer etch down to the remaining oxideliner 925, as depicted in FIG. 12. Approximately 40%-80% of the chiparea at this point is covered with the oxide liner 925 and, therefore,it functions as a sufficient distinct etch stop signal. Consequently,there is a minimal loss of the nitride layer 923, e.g., less than 10 Å,resulting from the etching of the nitride layer 1101.

A soft cleaning is performed, and then a photoresist layer 1301 isformed over the NFET and PFET EG gate structures 903 and 907,respectively, as depicted in FIG. 13. Adverting to FIG. 14, the verticalportions of the nitride layer 1101 are removed from the NFET and PFET SGgate structures 901 and 905, respectively, by an isotropic nitride etchhighly selective to oxide, e.g., difluoromethane (CH₂F₂) or CH₃F. Next,the photoresist layer 1301 is stripped, and the oxide liner 925 isremoved, e.g., by wet or dry etching, as depicted in FIG. 15. The wafersurface at this step is completely protected by the nitride layer 923,and, therefore, there should be no damage to the wafer as a result ofremoving the oxide liner 925.

Adverting to FIG. 16, a photoresist layer 1601 is formed over the NFETSG and EG gate structures 901 and 903, respectively. Alternatively, thephotoresist layer 1601 could be formed over the PFET SG and EG gatestructures 905 and 907, respectively. Whether to mask the NFET or PFETgate structures first depends on the desired spacer thickness for eachdevice, as later stage masking produces thicker spacers. Exposedhorizontal portions of the nitride layer 923 are then removed, e.g., byRIE, from the PFET SG and EG structures 905 and 907, respectively, asdepicted in FIG. 17. Thereafter, the photoresist layer 1601 is stripped,and an epi pre-clean process is performed, e.g., using dilutedhydrofluoric acid (DHF)/SiCoNi™, which will remove some of the BOX layer915 (not shown for illustrative convenience).

Next, the RSD structures 1801 are formed by epitaxial growth on the SiGelayer 919 and the Si layer 917 adjacent to the PFET SG and EG structures905 and 907, respectively, or on the Si layers 917 adjacent to the NFETSG and EG structures 901 and 903, respectively, depending on which gatestructures are masked first, as depicted in FIG. 18. A nitride layer1901 is then formed over the entire substrate (not shown forillustrative convenience). Next, a photoresist layer 1903 is formed overthe PFET SG and EG gate structures 905 and 907, respectively, or overthe NFET SG and EG gate structures 901 and 903, respectively, dependingon which gate structures are masked first. Horizontal portions of thenitride layers 1901 and 923 are then removed, e.g., by RIE, from theNFET SG and EG gate structures 901 and 903, respectively.

Adverting to FIG. 20, similar to FIG. 17, the photoresist layer 1903 isstripped, and an epi pre-clean process is performed, e.g., usingDHF/SiCoNi™, again removing some of the BOX layer 915 (not shown forillustrative convenience). The RSD structures 2001 are then formed byepitaxial growth on the Si layers 917 adjacent to the NFET SG and EGstructures 901 and 903, respectively, or the SiGe layer 919 and the Silayer 917 adjacent to the PFET SG and EG structures 905 and 907,respectively, depending on which gate structures are masked first. Next,the gate caps 912 are removed, and nitride layers 923, 1101, and 1901are etched, e.g., by RIE or by an appropriate wet etch using hotphosphoric acid, down to the upper surface of the silicon layer 911, asdepicted in FIG. 21. The nitride layer 1901 is then removed from the RSDstructures 1801 or 2001, wherever it remains. The removal of the nitridelayers 923, 1101, and 1901 may also be performed with an optionalorganic planarization layer (OPL) plus etch back protection. Thereafter,a spacer nitride deposition, etch, and silicidation is performed (notshown for illustrative convenience).

FIGS. 22 through 31 (cross-sectional views) schematically illustrateanother process flow for forming a FDSOI HKMG device having differentnitride and/or nitride/oxide spacer widths for the NFET SG gatestructure, PFET SG structure, and PFET/NFET EG gate structures, inaccordance with an exemplary embodiment. Adverting to FIG. 22, similarto FIG. 9, NFET SG and EG gate structures 2201 and 2203, respectively,and PFET SG and EG structures 2205 and 2207, respectively, are formedover a FDSOI substrate (not shown for illustrative convenience). Eachgate structure includes a high-K metal gate 2209, a silicon layer 2211,and a gate cap 2212, and the NFET and PFET EG structures 2203 and 2207,respectively, also include a thick gate oxide layer 2213 compared to thenonvisible gate oxide on the SG side. A BOX layer 2215 and a Si channellayer 2217 or a SiGe channel layer 2219 are formed over the FDSOIsubstrate and STI regions 2221 are formed between the BOX layer 2215. Anitride layer 2223 is then conformally formed over the substrate. Thenitride layer 2223 may be formed, e.g., to a thickness of 56 Å to 64 Åby MLD. Thereafter, an oxide liner 2225 is conformally formed, forexample, to a thickness of 20 Å to 40 Å, over the nitride layer 2223.

Next, a nitride layer 2227 is conformally formed to a thickness of 60 Åto 80 Å by MLD over the substrate, as depicted in FIG. 23. Horizontalportions of the nitride layer 2227 are then removed, for example, byperforming a spacer etch down to the oxide liner 2225, leaving thenitride layer 2223 untouched, as depicted in FIG. 24. Thereafter, a softcleaning is performed, e.g., using a cold SC1 solution.

Adverting to FIG. 25, a photoresist layer 2501 is formed over the NFETand PFET EG gate structures 2203 and 2207, respectively. The verticalportions of the nitride layer 2227 are then removed from the NFET andPFET SG gate structures 2201 and 2205, respectively, for example by anisotropic nitride etch highly selective to oxide, e.g., CH₂F₂ or CH₃F.Next, the photoresist layer 2501 is stripped, and the exposed the oxideliner 2225 is removed, e.g., by wet or dry etching, leaving the oxideliner 2225 only remaining between the nitride layers 2223 and 2227 ofthe NFET and PFET EG gate structures 2203 and 2207, respectively, asdepicted in FIG. 26.

FIGS. 27 through 31 generally follow the same process flow as FIGS. 16through 21; however, the resulting device requires one fewer mask, andalso includes a small L-shaped oxide liner 2225 in the NFET and PFET EGgate structures 2203 and 2207, respectively. Adverting to FIG. 27, aphotoresist layer 2701 is formed over the NFET SG and EG gate structures2201 and 2203, respectively. Alternatively, the photoresist layer 2701could be formed over the PFET SG and EG gate structures 2205 and 2207,respectively. Whether to mask the NFET or PFET gate structures firstdepends on the desired spacer thickness for each device, as later stagemasking produces thicker spacers. Horizontal portions of the nitridelayer 2223 are then removed, e.g., by RIE, from the PFET SG and EGstructures 2205 and 2207, respectively. Thereafter, the photoresistlayer 2701 is stripped and an epi pre-clean process is performed, e.g.,using DHF/SiCoNi™, which will remove some of the BOX layer 2215 (notshown for illustrative convenience).

Next, the RSD structures 2801 are formed by epitaxial growth on the SiGelayer 2219 and the Si layer 2217 adjacent to the PFET SG and EGstructures 2205 and 2207, respectively, or on the Si layers 2217adjacent to the NFET SG and EG structures 2201 and 2203, respectively,depending on which gate structures are masked first, as depicted in FIG.28. Adverting to FIG. 29, a nitride layer 2901 is conformally formedover the entire substrate (not shown for illustrative convenience). Aphotoresist layer 2903 is then formed over the PFET SG and EG gatestructures 2205 and 2207, respectively, or over the NFET SG and EG gatestructures 2201 and 2203, respectively, depending on which gatestructures are masked first in FIG. 27. Exposed horizontal portions ofthe nitride layers 2901 and 2223 are then removed, e.g., by RIE.

Adverting to FIG. 30, the photoresist layer 2903 is stripped and an epipre-clean process is again performed, e.g., using DHF/SiCoNi™, removingsome of the BOX layer 2215 (not shown for illustrative convenience). TheRSD structures 3001 are then formed by epitaxial growth on the Si layers2217 adjacent to the NFET SG and EG structures 2201 and 2203,respectively, or the SiGe layer 2219 and the Si layer 2217 adjacent tothe PFET SG and EG structures 2205 and 2207, respectively, depending onwhich gate structures are masked first in FIG. 27.

Next, the gate caps 2212 are removed, and the nitride layers 2223, 2227,and 2901 and the oxide liner 2225 are etched, e.g., by RIE or by anappropriate wet etch using hot phosphoric acid, down to the uppersurface of the silicon layer 2211, as depicted in FIG. 31. The nitridelayer 2901 is then removed from the RSD structures 2801 or 3001,wherever it remains. The removal of the nitride layers 2223, 2227, and2901 and the oxide liner 2225 may also be performed with an optional OPLplus etch back protection. Thereafter, a spacer nitride deposition,etch, and silicidation is performed (not shown for illustrativeconvenience).

The embodiments of the present disclosure can achieve several technicaleffects including requiring only one additional mask layer (re-using theexisting EG mask); forming NFET and PFET EG spacers that are thicker toimprove reliability without sacrificing SG performance; forming matchedPFET and NFET spacers; and forming SG devices that have faceted RSD dueto L-shaped spacers, reducing Gate-to-RSD capacitance and improvingparasitic capacitance (Ceff), which directly translates to improved ACperformance. The embodiments of the present disclosure can also achieveseveral additional technical effects including forming different andindependent spacer thicknesses for SG NFET, SG PFET, and PFET/NFET EGgate structures on FDSOI and all of the gate structures having fullnitride spacers. Embodiments of the present disclosure enjoy utility invarious industrial applications as, for example, microprocessors, smartphones, mobile phones, cellular handsets, set-top boxes, DVD recordersand players, automotive navigation, printers and peripherals, networkingand telecom equipment, gaming systems, and digital cameras. The presentdisclosure therefore enjoys industrial applicability in FDSOI devicesand/or any technology requiring RSD epitaxy.

In the preceding description, the present disclosure is described withreference to specifically exemplary embodiments thereof. It will,however, be evident that various modifications and changes may be madethereto without departing from the broader spirit and scope of thepresent disclosure, as set forth in the claims. The specification anddrawings are, accordingly, to be regarded as illustrative and not asrestrictive. It is understood that the present disclosure is capable ofusing various other combinations and embodiments and is capable of anychanges or modifications within the scope of the inventive concept asexpressed herein.

What is claimed is:
 1. A device comprising: p-type field effecttransistor (PFET) core device (SG) and I/O device (EG) gate structuresand n-type field effect transistor (NFET) SG and EG gate structuresformed on a substrate, the PFET and NFET structures laterally separated,and the NFET SG and PFET SG are positioned adjacent to one another on afirst side of the substrate, and the NFET EG and PFET EG are positionedadjacent to one another on a second side of the substrate, when viewedin cross-section; a pair of L-shaped nitride spacers formed on thesubstrate and adjacent to sidewalls of each of the PFET and NFET SG andEG gate structures; an L-shaped oxide spacer formed on and adjacent toeach L-shaped nitride spacer of the PFET and NFET EG gate structures,wherein each L-shaped oxide spacer is formed of undoped oxide (UDOX) orozone tetraethyl orthosilicate (TEOS); a nitride spacer formed on andadjacent to each L-shaped oxide spacer; faceted raised source/drain(RSD) structures formed on opposite sides of each of the PFET and NFETSG gate structures; and RSD structures formed on opposite sides of eachof the PFET and NFET EG gate structures.
 2. The device according toclaim 1, wherein each L-shaped nitride spacer prevents epitaxial silicongrowth on or around the RSD structures, but provides overlap ofsource/drain regions.
 3. The device according to claim 2, wherein eachL-shaped nitride spacer has a thickness of 4 nanometer (nm) to 8 nm. 4.The device according to claim 3, wherein each L-shaped nitride spacerand each nitride spacer is formed of silicon oxycarbonitride (SiOCN),high-temperature nitride, or silicon borocarbonitride (SiBCN).
 5. Thedevice according to claim 1, wherein a horizontal surface of eachL-shaped nitride spacer and of each L-shaped oxide spacer is 2 nm to 6nm in length.
 6. The device according to claim 1, further comprising athin oxide liner over each of the faceted RSD structures.
 7. The deviceaccording to claim 6, wherein the thin oxide layer has a thickness of 2nm to 3 nm.